Part number:
DMN10H700S
Manufacturer:
File Size:
596.21 KB
Description:
N-channel mosfet.
* BVDSS 100V RDS(ON) 700mΩ @ VGS = 10V 900mΩ @ VGS = 6.0V ID TA = +25°C 0.70A 0.62A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. A
DMN10H700S Datasheet (596.21 KB)
DMN10H700S
596.21 KB
N-channel mosfet.
📁 Related Datasheet
DMN10H099SFG - N-Channel MOSFET
(Diodes)
ADVANCE INFORMATION
DMN10H099SFG
100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Product Summary
V(BR)DSS 100V
RDS(ON) max 80mΩ @ VGS = 10V 99mΩ @.
DMN10H099SK3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
.
DMN10H099SK3 - N-Channel MOSFET
(Diodes)
NEW PNREOWDPURCOTDUCT
Green
DMN10H099SK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(on) max
80mΩ @ VGS = 10V 99m.
DMN10H100SK3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
.
DMN10H100SK3 - N-Channel MOSFET
(Diodes)
NEW PNREOWDPURCOTDUCT
DMN10H100SK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) max
80mΩ @ VGS = 10V 100mΩ @ VGS = 4..
DMN10H120SE - N-Channel MOSFET
(Diodes)
A D V A N C E E DN IENWF OPRR OMDA TUICOTN
Product Summary
V(BR)DSS 100V
RDS(ON) max
110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V
ID max TA = +25°C
3.6A
3.
DMN10H120SFG - N-Channel MOSFET
(Diodes)
ADVANCE INFORMATION
Product Summary
V(BR)DSS 100V
RDS(ON) max 110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V
ID max TA = +25°C
3.8 A
3.6 A
Description
This.
DMN10H170SFDE - N-Channel MOSFET
(Diodes)
ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION
Product Summary
V(BR)DSS 100V
RDS(ON) max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V
ID max TA = +25°C
2.9A
2.6A
.