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PTB20167 60 Watts/ 850-960 MHz RF Power Transistor

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Description

e PTB 20167 60 Watts, 850 *960 MHz RF Power Transistor .
The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz.

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Datasheet Specifications

Part number
PTB20167
Manufacturer
Ericsson
File Size
47.22 KB
Datasheet
PTB20167_Ericsson.pdf
Description
60 Watts/ 850-960 MHz RF Power Transistor

Applications

* Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • 24 Volt, 905 MHz Common Base Characteristics - Output Power = 60 W - Power Gain = 7.0 dB Min - Efficiency = 60% Min Double Input/Output Matche

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