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PTB20187 4 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor

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Description

e PTB 20187 4 Watts, 1.8 *2.0 GHz Cellular Radio RF Power Transistor .
The 20187 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.

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Datasheet Specifications

Part number
PTB20187
Manufacturer
Ericsson
File Size
43.43 KB
Datasheet
PTB20187_Ericsson.pdf
Description
4 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor

Applications

* Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • • • 4 Watts, 1.80
* 2.00 GHz Class AB Characteristics 30% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Pas

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