Datasheet4U Logo Datasheet4U.com

EMBA5P06J

P-Channel Logic Level Enhancement Mode Field Effect Transistor

EMBA5P06J Datasheet (168.64 KB)

Preview of EMBA5P06J PDF

Datasheet Details

Part number:

EMBA5P06J

Manufacturer:

Excelliance MOS

File Size:

168.64 KB

Description:

P-channel logic level enhancement mode field effect transistor.
P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS -60V RDSON (MAX.) 150mΩ ID -2.2A G S Pb-Free Lead Pl.

📁 Related Datasheet

EMBA5P06P - MOSFET (Excelliance MOS)
    P‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  ‐60V  D RDSON (MAX.)  150mΩ  ID  ‐2.4A  G    S .

EMBA5A10G - MOSFET (Excelliance MOS)
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH BVDSS 100V RDSON (MAX.) 150mΩ ID 3A Pb‐Free Lead Pl.

EMBA5C10A - MOSFET (Excelliance MOS)
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) ID N‐CH 100V 150mΩ 3A P‐CH ‐100V 250mΩ ‐2.5.

EMBA5C10G - N & P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 100V ‐100V RDSON (MAX.) 150mΩ 250mΩ ID 3.

EMBA5N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg.

EMBA5N10AS - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V 135mΩ RDSON (MAX.)@VGS=4.5.

EMBA5N10CS - MOSFET (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 150mΩ ID 10A G UIS, Rg 100% Tested.

EMBA5N10G - MOSFET (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  4A  G   UIS, Rg.

TAGS

EMBA5P06J P-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

Image Gallery

EMBA5P06J Datasheet Preview Page 2 EMBA5P06J Datasheet Preview Page 3

EMBA5P06J Distributor