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BS270 - N-Channel Enhancement Mode Field Effect Transistor

BS270 Description

April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

BS270 Features

* 400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol

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Datasheet Details

Part number
BS270
Manufacturer
Fairchild Semiconductor
File Size
348.17 KB
Datasheet
BS270_FairchildSemiconductor.pdf
Description
N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor
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