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FDC633N Datasheet - Fairchild Semiconductor

FDC633N - N-Channel MOSFET

This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications in notebook com

FDC633N Features

* 5.2 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V RDS(ON) = 0.054 Ω @ VGS = 2.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT-23

FDC633N_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDC633N

Manufacturer:

Fairchild Semiconductor

File Size:

278.75 KB

Description:

N-channel mosfet.

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