FDC633N

N-Channel MOSFET

Fairchild Semiconductor

FDC633N Features

* 5.2 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V RDS(ON) = 0.054 Ω @ VGS = 2.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT-23

FDC633N General Description

This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook com.

FDC633N Datasheet (278.75 KB)

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Datasheet Details

Part number:

FDC633N

Manufacturer:

Fairchild Semiconductor

File Size:

278.75 KB

Description:

N-channel mosfet.

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FDC633N N-Channel MOSFET Fairchild Semiconductor

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FDC633N Features

FDC633N General Description

Datasheet Details

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