FDC633N N-Channel MOSFET

Fairchild Semiconductor

Description

March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General .
This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: FDC633N
Manufacturer: Fairchild Semiconductor
File Size: 278.75 KB
Datasheet: FDC633N_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 5.2 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V RDS(ON) = 0.054 Ω @ VGS = 2.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT-23

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FDC633N N-Channel MOSFET Fairchild Semiconductor

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