Part number:
FDC633N
Manufacturer:
Fairchild Semiconductor
File Size:
278.75 KB
Description:
N-channel mosfet.
FDC633N_FairchildSemiconductor.pdf
Datasheet Details
This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications in notebook com
FDC633N Features
* 5.2 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V RDS(ON) = 0.054 Ω @ VGS = 2.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT-23
FDC633N_FairchildSemiconductor.pdf
Datasheet Details
FDC633N
Fairchild Semiconductor
278.75 KB
N-channel mosfet.
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