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FDG361N N-Channel MOSFET

FDG361N Description

FDG361N August 2001 FDG361N N-Channel 100V Specified PowerTrenchMOSFET General .
These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to.

FDG361N Features

* 0.6 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V
* Low gate charge (3.7nC typical)
* Fast switching speed

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N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDG361N-like datasheet