FDG361N Datasheet - Fairchild Semiconductor

FDG361N N-Channel MOSFET

These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptiona.

FDG361N Features

* 0.6 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V

* Low gate charge (3.7nC typical)

* Fast switching speed

* High performance trench technology for extremely low RDS(ON) Applications

* Load switch

* Battery protection

FDG361N Datasheet (80.83 KB)