FDMC4435BZ MOSFET

Fairchild Semiconductor

Description

FDMC4435BZ P-Channel Power Trench® MOSFET FDMC4435BZ P-Channel Power Trench® MOSFET -30 V, -18 A, 20 mΩ November 2015 .
Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -8. Max rDS(on) = 37 mΩ at VGS = -4. Extended VGSS range (-.

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Datasheet Specifications

Part number: FDMC4435BZ
Manufacturer: Fairchild Semiconductor
File Size: 433.42 KB
Datasheet: FDMC4435BZ-FairchildSemiconductor.pdf
Description: MOSFET

Applications

* High performance trench technology for extremely low rDS(on)
* High power and current handling capability
* HBM ESD protection level >7 kV typical (Note 4)
* 100% UIL Tested
* Termination is Lead-free and RoHS Compliant This P-Channel MOSFET is produced usi

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FDMC4435BZ MOSFET Fairchild Semiconductor

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