FDMC4435BZ-F127

P-Channel MOSFET

ON Semiconductor

FDMC4435BZ-F127 Features

* Max rDS(on) = 20 mW at VGS =

* 10 V, ID =

* 8.5 A

* Max rDS(on) = 37 mW at VGS =

* 4.5 V, ID =

* 6.3 A

* Extended VGSS Range (

* 25 V) for Battery Applications

* High Performance Trench Technology for Extremely Low rDS(on)

* High Power and Curr

FDMC4435BZ-F127 General Description

This P

*Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

*state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

FDMC4435BZ-F127 Datasheet (591.89 KB)