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FDMC4D9P20X8 P-Channel Power MOSFET

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Description

FDMC4D9P20X8 P‐Channel Power Trench) MOSFET *20 V, *75 A, 4.9 mW General .
This P. Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching perfor.

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Features

* Max rDS(on) = 4.9 mW at VGS =
* 4.5 V, ID =
* 18 A
* Max rDS(on) = 16.4 mW at VGS =
* 1.8 V, ID =
* 9 A
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability in a Widely Used Surface M

Applications

* Load Switch
* Battery Management
* Power Management
* Reverse Polarity Protection MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage
* 20 V VGS Gate to Source Voltage ±12 V ID Drain Cur

FDMC4D9P20X8 Distributors

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P-Channel Power MOSFET ON Semiconductor
ON Semiconductor FDMC4D9P20X8-like datasheet