FDMC4D9P20X8

P-Channel Power MOSFET

ON Semiconductor

* Max rDS(on) = 4.9 mW at VGS =

* 4.5 V, ID =

* 18 A

* Max rDS(on) = 16.4 mW at VGS =

* 1.8 V, ID =

* 9 A

* High Performance Trench Technology for Extremely Low rDS(on)

* High Power and Current Handling Capability in a Widely Used Surface M

FDMC4D9P20X8

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P-channel power mosfet.

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FDMC4D9P20X8 P-Channel Power MOSFET ON Semiconductor

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