FDMS7682 Datasheet - Fairchild Semiconductor

FDMS7682 MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diod.

FDMS7682 Features

* Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 14 A

* Max rDS(on) = 10.4 mΩ at VGS = 4.5 V, ID = 11 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery

* MS

FDMS7682 Datasheet (320.48 KB)