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FDMS8570S

MOSFET

FDMS8570S Features

* Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A

* Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A

* High performance technology for extremely low rDS(on)

* SyncFETTM Schottky Body Diode

* RoHS Compliant General Description This N-Channel SyncFETTM is produced

FDMS8570S General Description

This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-toAmbient thermal resis.

FDMS8570S Datasheet (336.96 KB)

Preview of FDMS8570S PDF

Datasheet Details

Part number:

FDMS8570S

Manufacturer:

Fairchild Semiconductor

File Size:

336.96 KB

Description:

Mosfet.

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TAGS

FDMS8570S MOSFET Fairchild Semiconductor

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