FDMS8460

N-Channel MOSFET

ON Semiconductor

* Max rDS(on) = 2.2 mW at VGS = 10 V, ID = 25 A

* Max rDS(on) = 3.0 mW at VGS = 4.5 V, ID = 21.7 A

* Advanced Package and Silicon combination for low rDS(on)

* MSL1 robust package design

* 100% UIL tested

* RoHS Compliant Applications

* DC

FDMS8460

492.42 KB

N-channel mosfet.

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FDMS8460 N-Channel MOSFET ON Semiconductor

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