FDMS8018 - MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diod
FDMS8018 Features
* Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
* Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A
* Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency
* Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
* MSL
