FDMS8018 Datasheet - Fairchild Semiconductor

FDMS8018 MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diod.

FDMS8018 Features

* Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A

* Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A

* Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency

* Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery

* MSL

FDMS8018-FairchildSemiconductor.pdf