FDMS8025S - MOSFET
* Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A * Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A * Advanced package and silicon combination for low rDS(on) and high efficiency * SyncFET Schottky Body Diode * MSL1 robust package design * 100% UIL teste
