FDMS8320L

N-Channel MOSFET

ON Semiconductor

FDMS8320L Features

* Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 32 A

* Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 27 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery

* MSL

FDMS8320L General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diod.

FDMS8320L Datasheet (372.31 KB)