Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Primary DC-DC MOSFET
Secondary Synchronous Rectifier
Load Switch
Top Pin 1
Bottom S Pin 1 S S G
S S
D D D D
Power 56
S G
D D D D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Dr
Features
- Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A.
- Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A.
- Advanced Package and Silicon combination for low rDS(on)
and high efficiency.
- MSL1 robust package design.
- 100% UIL tested.
- RoHS Compliant
General.