Description
FDMS8350L N-Channel PowerTrench® MOSFET March 2015 FDMS8350L N-Channel PowerTrench® MOSFET 40 V, 290 A, 0.85 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-s.
Features
* Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A
* Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A
* Advanced Package and Silicon combination for low rDS(on)
and high efficiency
* MSL1 robust package design
* 100% UIL tested
* RoHS Compliant
General De
Applications
* Primary DC-DC MOSFET
* Secondary Synchronous Rectifier
* Load Switch
Top Pin 1
Bottom S Pin 1 S S G
S S
D D D D
Power 56
S G
D D D D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate
