FDMS8333L Datasheet - Fairchild Semiconductor

FDMS8333L MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body dio.

FDMS8333L Features

* Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 22 A

* Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery

* MSL

FDMS8333L Datasheet (354.53 KB)