FDMS8050ET30 - MOSFET
* Extended TJ rating to 175°C * Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A * Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A * Advanced Package and Silicon combination for low rDS(on) and high efficiency * MSL1 robust package design * 100% UIL test
