FDS6612A Datasheet - Fairchild Semiconductor

FDS6612A PowerTrench MOSFET

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered a.

FDS6612A Features

* 8.4 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 30 mΩ @ VGS = 4.5 V

* Fast switching speed

* Low gate charge

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability DD DDDD DD SO-8 Pin 1 SO-8 S

FDS6612A_FairchildSemiconductor.pdf