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FDS8690 N-Channel PowerTrench MOSFET

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Description

FDS8690 N-Channel PowerTrench® MOSFET January 2006 FDS8690 N-Channel PowerTrench® MOSFET 30V, 14A, 7.6mΩ General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number
FDS8690
Manufacturer
Fairchild Semiconductor
File Size
375.30 KB
Datasheet
FDS8690_FairchildSemiconductor.pdf
Description
N-Channel PowerTrench MOSFET

Features

* Max rDS(on) = 7.6mΩ, VGS = 10V, ID = 14A
* Max rDS(on) = 11.4mΩ, VGS = 4.5V, ID = 11.5A
* High performance trench technology for extremely low rDS(on) and fast switching
* Very low gate charge
* High power and current handling capability
* 100% RG te

Applications

* Notebook CPU power supply
* Synchronous rectifier M ENTATIO LE N MP www. DataSheet4U. com Absolute Maximum Ratings TA = 25°C unless otherwise Noted Symbol VDS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Aval

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