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FQAF19N60

600V N-Channel MOSFET

FQAF19N60 Features

* 11.2A, 600V, RDS(on) = 0.38 Ω @ VGS = 10 V Low gate charge ( typical 70 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Ratin

FQAF19N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQAF19N60 Datasheet (526.05 KB)

Preview of FQAF19N60 PDF

Datasheet Details

Part number:

FQAF19N60

Manufacturer:

Fairchild Semiconductor

File Size:

526.05 KB

Description:

600v n-channel mosfet.

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TAGS

FQAF19N60 600V N-Channel MOSFET Fairchild Semiconductor

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