FQB1N60 Datasheet - Fairchild Semiconductor

600V N-Channel MOSFET

FQB1N60 Features

* 1.2A, 600V, RDS(on) = 11.5Ω @VGS = 10 V Low gate charge ( typical 5.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series G D S I2-PAK FQI Series G! ! " " " !

FQB1N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB1N60 Datasheet (545.43 KB)

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Datasheet Details

Part number:

FQB1N60

Manufacturer:

Fairchild Semiconductor

File Size:

545.43 KB

Description:

600v n-channel mosfet.

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FQB1N60 600V N-Channel MOSFET Fairchild Semiconductor

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FQB1N60 Features

FQB1N60 General Description

Datasheet Details

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