FQD19N10 N-Channel MOSFET

Fairchild Semiconductor

Description

FQD19N10 * N-Channel QFET® MOSFET FQD19N10 N-Channel QFET® MOSFET 100 V, 15.6 A, 100 mΩ November 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQD19N10
Manufacturer: Fairchild Semiconductor
File Size: 1.18 MB
Datasheet: FQD19N10_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 15.6 A, 100 V, RDS(on) = 100 mΩ (Max. ) @ VGS = 10 V, ID = 7.8 A
* Low Gate Charge (Typ. 19 nC)
* Low Crss (Typ. 32 pF)
* 100% Avalanche Tested D G S D D-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt

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FQD19N10 N-Channel MOSFET Fairchild Semiconductor

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