FQD19N10 Datasheet, Mosfet, Fairchild Semiconductor

FQD19N10 Features

• Mosfet
• 15.6 A, 100 V, RDS(on) = 100 mΩ (Max.) @ VGS = 10 V, ID = 7.8 A
• Low Gate Charge (Typ. 19 nC)
• Low Crss (Typ. 32 pF)
• 100% Avalanche Tested D G S

PDF File Details

Part number:

FQD19N10

Manufacturer:

Fairchild Semiconductor

File Size:

1.18MB

Download:

📄 Datasheet

Description:

N-channel mosfet. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technolog

FQD19N10 Application

• Applications Features
• 15.6 A, 100 V, RDS(on) = 100 mΩ (Max.) @ VGS = 10 V, ID = 7.8 A
• Low Gate Charge (Typ. 19 nC)
• L

TAGS

FQD19N10

Fairchild Semiconductor

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