FQD19N10 Datasheet (Fairchild Semiconductor)

FQD19N10, N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQD19N10 Features

* 15.6 A, 100 V, RDS(on) = 100 mΩ (Max.) @ VGS = 10 V, ID = 7.8 A

* Low Gate Charge (Typ. 19 nC)

* Low Crss (Typ. 32 pF)

* 100% Avalanche Tested D G S D D-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt