FQD19N10L

N-Channel MOSFET

Fairchild Semiconductor

FQD19N10L Features

* 15.6 A, 100 V, RDS(on) = 100 mΩ (Max.) @ VGS = 10 V

* Low Gate Charge (Typ. 14 nC)

* Low Crss (Typ. 35 pF)

* 100% Avalanche Tested D D G S D-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG

FQD19N10L General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQD19N10L Datasheet (1.32 MB)

FQD19N10L Datasheet Preview — Preview of FQD19N10L PDF

Datasheet Details

Part number:

FQD19N10L

Manufacturer:

Fairchild Semiconductor

File Size:

1.32 MB

Description:

N-channel mosfet.

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FQD19N10L N-Channel MOSFET Fairchild Semiconductor

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FQD19N10L Features

FQD19N10L General Description

Datasheet Details

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Description:

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