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FQI15P12 Datasheet - Fairchild Semiconductor

FQI15P12 120V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQI15P12 Features

* -15A, -120V, RDS(on) = 0.2Ω @VGS = -10 V

* Low gate charge ( typical 29 nC)

* Low Crss ( typical 110 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* 175°C maximum junction temperature rating D GS D2-PAK FQB Serie

FQI15P12 Datasheet (652.31 KB)

FQI15P12 Datasheet Preview — Preview of FQI15P12 PDF

Datasheet Details

Part number:

FQI15P12

Manufacturer:

Fairchild Semiconductor

File Size:

652.31 KB

Description:

120v p-channel mosfet.

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FQI15P12 120V P-Channel MOSFET Fairchild Semiconductor

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