FQI1N60 600V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB1N60 / FQI1N60 April 2000 QFET FQB1N60 / FQI1N60 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQI1N60
Manufacturer: Fairchild Semiconductor
File Size: 545.43 KB
Datasheet: FQI1N60_FairchildSemiconductor.pdf
Description: 600V N-Channel MOSFET

Features

* 1.2A, 600V, RDS(on) = 11.5Ω @VGS = 10 V Low gate charge ( typical 5.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series G D S I2-PAK FQI Series G! ! " " " !

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FQI1N60 600V N-Channel MOSFET Fairchild Semiconductor

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