FQI1P50 Datasheet (Fairchild Semiconductor)

FQI1P50, 500V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in th

FQI1P50 Features

* -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S !

* G! G S ▶ ▲

* D2-PAK FQB Series G D S I2-PAK F