FQI1P50 500V P-Channel MOSFET

Fairchild Semiconductor

Description

FQB1P50 / FQI1P50 December 2000 QFET FQB1P50 / FQI1P50 500V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQI1P50
Manufacturer: Fairchild Semiconductor
File Size: 571.43 KB
Datasheet: FQI1P50_FairchildSemiconductor.pdf
Description: 500V P-Channel MOSFET

Features

* -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S !
* G! G S ▶ ▲
* D2-PAK FQB Series G D S I2-PAK F

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FQI1P50 500V P-Channel MOSFET Fairchild Semiconductor

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