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HGT1S3N60C3D - 6A 600V UFS Series N-Channel IGBT

HGT1S3N60C3D Description

S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Packaging .
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar trans.

HGT1S3N60C3D Features

* 6A, 600V at TC = 25oC
* 600V Switching SOA Capability
* Typical Fall Time
* . . . . 130ns at TJ = 150oC
* Short Circuit Rating
* Low Conduction Loss

HGT1S3N60C3D Applications

* operating at moderate frequencies where low conduction losses are essential. PACKAGING AVAILABILITY PART NUMBER HGTP3N60C3D HGT1S3N60C3D HGT1S3N60C3DS PACKAGE TO-220AB TO-262AA TO-263AB BRAND G3N60C3D G3N60C3D G3N60C3D JEDEC TO-262AA COLLECTOR (FLANGE) A EMITTER COLLECTOR GATE JEDEC TO-263AB M A

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