Datasheet Specifications
- Part number
- HGTP5N120
- Manufacturer
- Fairchild Semiconductor
- File Size
- 216.82 KB
- Datasheet
- HGTP5N120_FairchildSemiconductor.pdf
- Description
- N-Channel IGBT
Description
HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N.
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many highHGTP5N120 Distributors
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