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HGTP5N120 Datasheet - Fairchild Semiconductor

HGTP5N120 N-Channel IGBT

HGTP5N120 Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high

HGTP5N120 Datasheet (216.82 KB)

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Datasheet Details

Part number:

HGTP5N120

Manufacturer:

Fairchild Semiconductor

File Size:

216.82 KB

Description:

N-channel igbt.

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