* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as:
HGTP5N120BN Datasheet (82.53 KB)
HGTP5N120BN
Intersil Corporation
82.53 KB
N-channel igbt.
HGTP5N120BN, HGT1S5N120BNS
Data Sheet January 2000 File Number 4599.2
21A, 1200V, NPT Series N-Channel IGBTs
The HGTP5N120BN and the HGT1S5N120BNS ar.
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