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HGTP5N120CND - N-Channel IGBT

Intersil Corporation

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Datasheet Details

Part number	HGTP5N120CND
Manufacturer	Intersil Corporation
File Size	87.10 KB
Description	N-Channel IGBT
Datasheet	HGTP5N120CND_IntersilCorporation.pdf

HGTP5N120CND Product details

Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is developmental type TA49309. The diode used in anti-parallel is developmental type TA49058. The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |