IRFW630B Datasheet - Fairchild Semiconductor

N-Channel MOSFET

IRFW630B Features

* 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D2-PAK IRFW Series G D S I2-PAK IRFI S

IRFW630B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFW630B Datasheet (671.69 KB)

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Datasheet Details

Part number:

IRFW630B

Manufacturer:

Fairchild Semiconductor

File Size:

671.69 KB

Description:

N-channel mosfet.

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IRFW630B N-Channel MOSFET Fairchild Semiconductor

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IRFW630B Features

IRFW630B General Description

Datasheet Details

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Description:

IRFW630B Distributor