IRFW634B Datasheet - Fairchild Semiconductor

IRFW634B, N-Channel MOSFET

IRFW634B / IRFI634B November 2001 IRFW634B / IRFI634B 250V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFW634B_FairchildSemiconductor.pdf

IRFW634B Datasheet Preview — Preview of IRFW634B PDF

Datasheet Details

Part number:

IRFW634B

Manufacturer:

Fairchild Semiconductor

File Size:

672.72 KB

Description:

N-Channel MOSFET

Features

* 8.1A, 250V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G! G S D2-PAK IRFW Series G D S I2-PAK IRF

IRFW634B Distributors

📁 Related Datasheet

IRFW630A IRFW610A IRFW450 IRFW720A IRFW730A IRFW830A

📌 All Tags

IRFW634B N-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor IRFW634B-like datasheet