IRFW634A Features
* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max.) @ VDS = 250V
* Lower RDS(ON): 0.327Ω(Typ.) Absolute Maximum Ratin
IRFI634A-FairchildSemiconductor.pdf
Datasheet Details
IRFW634A, IRFI634A
Fairchild Semiconductor
223.08 KB
Power mosfet.
This datasheet PDF includes multiple part numbers: IRFW634A, IRFI634A.
Please refer to the document for exact specifications by model.
IRFW634A Distributor
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