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FDB6676 N-Channel MOSFET

FDB6676 Description

FDP6676/FDB6676 April 2001 FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

FDB6676 Features

* 42 A, 30 V. RDS(ON) = 6.0 mΩ @ VGS = 10 V RDS(ON) = 7.5 mΩ @ VGS = 4.5 V
* Critical DC electrical parameters specified at elevated temperature
* High performance trench technology for extremely low RDS(ON)

FDB6676 Applications

* Synchronous rectifier
* DC/DC converter . D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed TA=25oC unless otherwise

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