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FDB6676S N-Channel MOSFET

FDB6676S Description

FDP6676S/FDB6676S October 2001 FDP6676S / FDB6676S 30V N-Channel PowerTrench SyncFET™ General .
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.

FDB6676S Features

* 38 A, 30 V. RDS(ON) = 6.5 mΩ @ VGS = 10 V RDS(ON) = 8.0 mΩ @ VGS = 4.5 V
* Includes SyncFET Schottky body diode
* Low gate charge (40nC typical)
* High performance trench technology for extremely low RDS(ON) and fast switching
* High power and current handl

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