Datasheet4U Logo Datasheet4U.com

FDC633N - N-Channel MOSFET

FDC633N Description

March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General .
This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.

FDC633N Features

* 5.2 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V RDS(ON) = 0.054 Ω @ VGS = 2.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT-23

📥 Download Datasheet

Preview of FDC633N PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FDC6303N - Dual N-Channel Digital FET (onsemi)
  • FDC6304P - Dual P-Channel MOSFET (ON Semiconductor)
  • FDC6305N - Dual N-Channel MOSFET (ON Semiconductor)
  • FDC6306P - Dual P-Channel 20V MOSFET (VBsemi)
  • FDC6310P - Dual P-Channel MOSFET (ON Semiconductor)
  • FDC6312P - Dual P-Channel 20V MOSFET (VBsemi)
  • FDC6320C - Dual N & P Channel Digital FET (ON Semiconductor)
  • FDC6321C - Dual N & P-Channel Digital FET (ON Semiconductor)

📌 All Tags

N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDC633N-like datasheet