FDC8884 - N-Channel MOSFET

Fairchild Semiconductor

FDC8884 Datasheet Preview — Preview of FDC8884 PDF

Datasheet Details

Part number	FDC8884
Manufacturer	Fairchild ↗ Semiconductor
File Size	319.39 KB
Description	N-Channel MOSFET
Datasheet	FDC8884-FairchildSemiconductor.pdf

FDC8884 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance. Primary Switch S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25 °C -Continuous TA = 25 °C -Pulsed Power Dissi

Features

Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A.
Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A.
High performance trench technology for extremely low rDS(on).
Fast switching speed.
RoHS Compliant General.

📁 FDC8884 Similar Datasheet

FDC8601 - N-Channel MOSFET (ON Semiconductor)
FDC8602 - Dual N-Channel MOSFET (ON Semiconductor)
FDC86244 - N-Channel MOSFET (ON Semiconductor)
FDC-xx - EMC Filters - Single-Phase Filters - FD/FDC/FDV IEC Connector Filter (Premo)
FDC05 - 5 WATTS OUTPUT POWER (Snaptec)
FDC05-48S120 - DC/DC Converter (Power Mate)
FDC10 - 10 watts of output power from a 2 x 1 x 0.4 inch package (ETC)
FDC1004 - 4-Channel Capacitance-to-Digital Converter (Texas Instruments)

Other Datasheets by Fairchild Semiconductor

FDC8886 - N-Channel MOSFET
FDC8878 - N-Channel MOSFET
FDC855N - Single N-Channel PowerTrench MOSFET
FDC2512 - N-Channel MOSFET
FDC2612 - N-Channel MOSFET
FDC3512 - N-Channel MOSFET

Published: Aug 3, 2014 |