Datasheet4U Logo Datasheet4U.com

FDG1024NZ - N-Channel MOSFET

FDG1024NZ Description

FDG1024NZ Dual N-Channel Power Trench® MOSFET August 2009 FDG1024NZ Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mΩ .
This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technolo.

FDG1024NZ Features

* Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A
* Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A
* Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A
* Max rDS(on) = 389 mΩ at VGS = 1.5 V, ID = 0.8 A
* HBM ESD protection level >2 kV (Note 3)
* Very low

FDG1024NZ Applications

* as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. G2 D1 S2 S1 1 G1 2 D2 S1 G1 D2 3 6 D1 5 G2 4 S2 SC70-6 www. DataSheet4U. c

📥 Download Datasheet

Preview of FDG1024NZ PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

📌 All Tags

N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDG1024NZ-like datasheet