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FDG8842CZ MOSFET

FDG8842CZ Description

FDG8842CZ Complementary PowerTrench® MOSFET FDG8842CZ Complementary PowerTrench® MOSFET April 2007 tm Q1:30V,0.75A,0.4Ω; Q2: *25V, *0.
These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technolo.

FDG8842CZ Features

* Q1: N-Channel
* Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
* Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel
* Max rDS(on) = 1.1Ω at VGS =
* 4.5V, ID =
* 0.41A
* Max rDS(on) = 1.5Ω at VGS =
* 2.7V, ID =
* 0.25A
* Very l

FDG8842CZ Applications

* as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital F

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