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FDG8850NZ MOSFET

FDG8850NZ Description

FDG8850NZ Dual N-Channel PowerTrench® MOSFET April 2007 FDG8850NZ Dual N-Channel PowerTrench® MOSFET tm 30V,0.75A,0.4Ω .
This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technolo.

FDG8850NZ Features

* Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
* Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
* Very low level gate drive requirements allowing operation in 3V circuits(VGS(th)

FDG8850NZ Applications

* as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. G2 D1 S2 SC70-6 Pin 1 D2 G1 S1 Q1 S1 G1 Q2 D2 D1 G2 S2

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