Datasheet Details
| Part number | FDMC8296 |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 394.56 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDMC8296_FairchildSemiconductor.pdf
|
| Part number | FDMC8296 |
|---|---|
| Manufacturer | Fairchild ↗ Semiconductor |
| File Size | 394.56 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FDMC8296_FairchildSemiconductor.pdf
|
Max rDS(on) = 8.0m: at VGS = 10V, ID = 12A Max rDS(on) = 13.0m: at VGS = 4.5V, ID = 10A High performance trench technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Noteboo
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