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FQA11N90C_F109 - MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FQA11N90C_F109
Manufacturer	Fairchild ↗ Semiconductor
File Size	1.00 MB
Description	MOSFET
Datasheet	FQA11N90C_F109-FairchildSemiconductor.pdf

FQA11N90C_F109 Product details

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

11 A, 900 V, RDS(on) = 1.1 Ω (Max. ) @ VGS = 10 V, ID = 5.5 A.
Low Gate Charge (Typ. 60 nC).
Low Crss (Typ. 23 pF).
100% Avalanche Tested.
RoHS compliant April 2014.

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Published: Jan 16, 2017 |