FQA19N60 600V N-Channel MOSFET

Fairchild Semiconductor

FQA19N60 Description

FQA19N60 * N-Channel QFET® MOSFET FQA19N60 N-Channel QFET® MOSFET 600 V, 18.5 A, 380 mΩ April 2014 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQA19N60 Features

* 18.5 A, 600 V, RDS(on) = 380 mΩ (Max. ) @ VGS = 10 V, ID = 9.3 A
* Low Gate Charge (Typ. 70 nC)
* Low Crss (Typ. 35 pF)
* 100% Avalanche Tested D G DS TO-3PN G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IA

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Datasheet Details

Part number: FQA19N60
Manufacturer: Fairchild Semiconductor
File Size: 1.42 MB
Datasheet: FQA19N60_FairchildSemiconductor.pdf
Description: 600V N-Channel MOSFET

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600V N-Channel MOSFET Fairchild Semiconductor

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