Datasheet Details
- Part number
- FQB34P10
- Manufacturer
- Fairchild Semiconductor
- File Size
- 1.83 MB
- Datasheet
- FQB34P10-FairchildSemiconductor.pdf
- Description
- MOSFET
FQB34P10 Description
FQB34P10 * P-Channel QFET® MOSFET FQB34P10 P-Channel QFET® MOSFET 100 V, -33.5 A, 60 mΩ March 2016 .
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
FQB34P10 Features
* -33.5 A, -100 V, RDS(on) = 60 mΩ (Max. ) @ VGS = .10 V, ID = -16.75 A
* Low Gate Charge (Typ. 85 nC)
* Low Crss (Typ. 170 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating
S
G S
D
D2-PAK
G
D
Absolute Maximum Ratings TC = 25°C unles
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