FQD12N20L N-Channel MOSFET

Fairchild Semiconductor

FQD12N20L Description

FQD12N20L * N-Channel QFET® MOSFET FQD12N20L N-Channel QFET® MOSFET 200 V, 9.0 A, 280 mΩ January 2014 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQD12N20L Features

* 9.0 A, 200 V, RDS(on) = 280 mΩ (Max. ) @ VGS = 10 V, ID = 4.5 A
* Low Gate Charge (Typ. 16 nC)
* Low Crss (Typ. 17 pF)
* 100% Avalanche Tested D D G S D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/

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Datasheet Details

Part number: FQD12N20L
Manufacturer: Fairchild Semiconductor
File Size: 1.20 MB
Datasheet: FQD12N20L_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET Fairchild Semiconductor

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