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FQD17N08 80V N-Channel MOSFET

FQD17N08 Description

FQD17N08 / FQU17N08 January 2001 QFET FQD17N08 / FQU17N08 80V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQD17N08 Features

* 12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Ab

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80V N-Channel MOSFET Fairchild Semiconductor
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