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FQI12P10 100V P-Channel MOSFET

FQI12P10 Description

FQB12P10 / FQI12P10 QFET FQB12P10 / FQI12P10 100V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI12P10 Features

* -11.5A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK F

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100V P-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQI12P10-like datasheet