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FQI3N25 250V N-Channel MOSFET

FQI3N25 Description

FQB3N25 / FQI3N25 November 2000 QFET FQB3N25 / FQI3N25 250V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI3N25 Features

* 2.8A, 250V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 4.7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series !

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Datasheet Details

Part number
FQI3N25
Manufacturer
Fairchild Semiconductor
File Size
621.21 KB
Datasheet
FQI3N25_FairchildSemiconductor.pdf
Description
250V N-Channel MOSFET

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250V N-Channel MOSFET Fairchild Semiconductor
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